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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts APPLICATION * Power driver and Dc to DC convertor . 2SB1188PT CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) SC-62/SOT-89 CONSTRUCTION * PNP Switching Transistor 4.6MAX. 1.7MAX. 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 MARKING * HFE(P):P1188 * HFE(Q):Q1188 * HFE(R):R1188 1 1 Base 2 3 CIRCUIT (1) B C (2) 2 Collector ( Heat Sink ) 3 Emitter E (3) 0.8MIN. 4.6MAX. Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Total Power Dissipation Storage Temperature Junction Temperature Note 1 Note 2 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM PTOT TSTG TJ MIN. -55 MAX. -40 -32 -5 -2 -3 2 +150 +150 UNITS Volts Volts Volts Amps Amps W o C C o Note 1. Single pulse, Pw=100mS 2. When mounted on a 40*40*0.7 mm ceramic board 2007-04 RATING CHARACTERISTIC CURVES ( 2SB1188PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Transition Frequency CONDITION IC=-50uA IC=-1.0mA IE=-50uA IE=0; VCB=-20V IC=0; VEB=-4V VCE=-3V; Note 3 IC=-0.5A IC=-2A; IB=-0.2A; Note 3 IE=ie=0; VCB=-10V; f=1MHz IE=-0.5A; VCE=-5.0V; f=100MHz SYMBOL BVCBO BVCEO BVECO ICBO IEBO hFE VCEsat CC fT MIN. -40 -32 -5 82 TYPE -0.5 50 100 MAX. -1.0 -1.0 390 -0.8 Volts pF MHz UNITS Volts Volts Volts uA uA Note : 3. Measured ueing pulse current 4. hFE Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390 RATING CHARACTERISTIC CURVES ( 2SB1188PT ) Typical Electrical Characteristics Figure 1. Grounded Emitter Propagation Characteristics -3000 Figure 2. DC Cueewnt Gain vs Collector Current 600 VCE=-3V -1000 VCE=-3V IC, COLLECTOR CURRENT (mA) a=100C T -100 a=-40C T hFE, DC CURRENT GAIN Ta=100C Ta=25C 100 T a=-25C -10 Ta=25C -1 0 -0.4 -0.8 -1.2 -1.6 VBE, BASE TO EMITTER VOLTAGE (V) -2.0 -2.2 20 -3 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 -3000 Figure 3. Collector-Emitter Saturation Voltage vs Collector Current VCE(sat), COLLECTOR SATURATION VOLTAGE (mV) -600 IC / IB=10 -100 a=-40C T a=100C T Ta=25C -10 -3 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 -3000 |
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